China University of Science and Technology uses synchrotron radiation technology to control the phase transition of vanadium dioxide thin film Recently, Zou Chongwen, associate researcher at the National Synchrotron Radiation Laboratory, University of Science and Technology of China, and Dr. Fan Lele have made use of synchrotron X-ray diffraction and reciprocal space imaging technology to study the epitaxial growth and the interfacial stress-controlled phase transition of vanadium dioxide ultra-thin films. Progress, the research results published in the recent Nano Letters. The vanadium dioxide material exhibits a unique and reversible phase change of the metal insulator. This phase change will cause the VO2 to undergo sudden changes in electrical, magnetic, and optical properties, such as a sudden change in its resistivity and infrared transmittance during the phase transition. Therefore, it has great prospects in the application of phase change memory and "smart window". However, this critical temperature for phase transition is 68 degrees, and it is still relatively high as a practical application. Therefore, the regulation of the vanadium dioxide phase transformation process and thus the reduction of the phase transition temperature has been a hot topic of research. The current method is to use tungsten, germanium and other atom doping to reduce the phase transition temperature to around room temperature. Although the temperature of the phase transition can be greatly reduced by the doping control described above, the originally-occurring catastrophic photoelectric functional properties, such as a great change in resistivity and infrared transmittance, are greatly impaired, thereby losing its function as a smart window material. the real function. The use of thin-film epitaxial deposition to generate interfacial stress in the vanadium dioxide thin film, thus reducing the phase transition temperature of the vanadium dioxide thin film has proved to be a feasible means. However, the influence of the introduction of interfacial stress on the lattice structure of the vanadium dioxide thin film and the mechanism of the regulation of the corresponding electronic state remain unclear. In response to the above problems, the researchers succeeded in preparing epitaxial vanadium dioxide films from several elementary cells to several tens of nanometers on a titania single crystal substrate using oxygen molecular beam epitaxy and testing their metal insulator phase transition characteristics. At the same time, the dynamical process of the interface stress change of this ultra-thin film was studied by synchrotron radiation diffraction reciprocal space imaging technology. Combined with the variable-temperature electrical test and the first-principles theoretical calculation results, this intrinsic stress was deeply revealed in its phase transition process. Regulatory mechanism. The results show that the effect of interfacial stress causes the lattice of the epitaxial vanadium dioxide ultra-thin film to expand, resulting in a significant change in the electronic state density, especially the electron occupying state of the d// orbit. This change in electronic state density and d orbital occupancy directly modulates the phase transition behavior of this epitaxial ultrathin film, resulting in a greatly reduced phase transition temperature. Reviewers believe that this work uses the advantages of synchrotron radiation source to give a more in-depth and clear physical image of the vanadium dioxide stress transformation control, and it is of important guiding significance for the study of phase change behavior of vanadium dioxide. The above research work has been funded by projects funded by the National Natural Science Foundation of China, the Youth Innovation Promotion Association of the Chinese Academy of Sciences, the Innovation Research Group Project, and the “973†Project of the Ministry of Science and Technology.
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